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Preliminary Technical Information
GenX3TM 1200V IGBT
IXGA20N120B3 IXGP20N120B3
VCES = 1200V IC90 = 20A VCE(sat) 3.1V
High Speed Low Vsat PT IGBTs 3-20 kHz Switching
TO-263 (IXGA)
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight
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Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 90C TC = 25C, 1ms VGE = 15V, TJ = 125C, RG = 15 Clamped Inductive load TC = 25C
Maximum Ratings 1200 1200 20 30 36 20 80 ICM = 40 @VCE 1200 180 -55 ... +150 150 -55 ... +150 V V V V A A A A V W C C C Nm/lb.in. N/lb. C C g g
G E C (TAB)
TO-220 (IXGP)
G
C (TAB) C E
G = Gate E = Emitter
C = Collector TAB = Collector
Mounting Torque (TO-220) Mounting Force (TO-263)
1.13/10 10..65 / 2.2..14.6 300 260 2.5 3.0
Features Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages Advantages High Power Density Low Gate Drive Requirement
Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s TO-263 TO-220
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250A, VGE = 0V = 250A, VCE = VGE TJ = 125C VCE = 0V, VGE = 20V IC = 16A, VGE = 15V, Note 2 TJ = 125C
Characteristic Values Min. Typ. Max. 1200 2.5 5.0 25 1 100 2.7 2.8 3.1 V V A mA nA V V
Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines Inductive Heating
VCE = VCES,VGE = 0V
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100126(03/09)
IXGA20N120B3 IXGP20N120B3
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Inductive load, TJ = 125C IC = 16A, VGE = 15V VCE = 600V, RG = 15 Note 1 Inductive load, TJ = 25C IC = 16A, VGE = 15V VCE = 600V, RG = 15 Note 1 IC = 16A, VGE = 15V, VCE = 0.5 * VCES IC = 16A, VCE = 10V, Note 2 VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 7.5 12.5 1070 80 32 51 7.4 23 16 31 0.92 150 155 0.56 16 45 1.60 180 540 1.63 0.50 1.00 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.69 C/W C/W TO-220 (IXGP) Outline TO-263 (IXGA) Outline
TO-220
Notes:
1. 2.
Switching Times may Increase for VCE (Clamp) > 0.5 * VCES, Higher TJ or Increased RG. Pulse Test, t 300s; Duty Cycle, d 2%.
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Pins:
1 - Gate
2 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGA20N120B3 IXGP20N120B3
Fig. 1. Output Characteristics @ 25C
32 28 24 VGE = 15V 13V 11V 140 VGE = 15V 120 100
Fig. 2. Extended Output Characteristics @ 25C
IC - Amperes
IC - Amperes
20 16 12 8 4
9V
13V 80 60 40 20 11V
7V
9V
5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0 4 8
7V 12 16 20 24 28
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
32 28 24 9V VGE = 15V 13V 11V 1.6 1.5 1.4
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V I
C
= 32A
VCE(sat) - Normalized
1.3 1.2 1.1 1.0 0.9 0.8 I = 8A I
C
IC - Amperes
20 16 12 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 7V
= 16A
5V
0.7 0.6 -50 -25 0 25 50
C
75
100
125
150
VCE - Volts
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TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
8 7 6 5 4 16A 3 2 1 5 6 7 8 9 10 11 12 13 14 15 8A TJ = 25C 40 35 30
Fig. 6. Input Admittance
I
C
= 32A
IC - Amperes
VCE - Volts
25 20 15 10 5 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 TJ = - 40C 25C 125C
VGE - Volts
VGE - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGA20N120B3 IXGP20N120B3
Fig. 7. Transconductance
16 TJ = - 40C 14 12 25C 16 14 12 VCE = 600V I C = 16A I G = 10 mA
Fig. 8. Gate Charge
g f s - Siemens
8 6 4 2 0 0 5 10 15 20 25 30 35 40 45
VGE - Volts
10
125C
10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 45
Fig. 10. Reverse-Bias Safe Operating Area
f = 1MHz Capacitance - PicoFarads
Cies 1,000
40 35 30
IC - Amperes
25 20 15 10 TJ = 125C RG = 15 dV / dt < 10V / ns
100
Coes
Cres 10 0 5 10 15 20 25 30 35 40
5 0 200
300
400
500
600
700
800
900 1000 1100 1200 1300
VCE - Volts
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VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_20N120B3(4L)03-17-09
IXGA30N120B3 IXGP30N120B3
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
3.2 3.0 2.8 Eoff VCE = 600V I
C
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
5.5 3.2 2.8 2.4 Eoff VCE = 600V Eon 4.0 5.0 4.5
Eon -
---
---TJ = 125C
TJ = 125C , VGE = 15V = 32A
RG = 15 , VGE = 15V
3.5 3.0
Eoff - MilliJoules
Eoff - MilliJoules
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 10 20 30 40 50 60 70
4.0
E
on
E - MilliJoules
3.5 3.0 2.5 2.0 I C = 16A 1.5 1.0 0.5 80 90
2.0 1.6 1.2 TJ = 25C 0.8 0.4 0.0 10 12 14 16 18 20 22 24 26 28 30 32
2.5 2.0 1.5 1.0 0.5 0.0
on
- MilliJoules
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
3.0 Eoff 2.5 VCE = 600V Eon 4.8 800 4.4 4.0 3.6 700
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
600
----
tfi
VCE = 600V
td(off) - - - 500
RG = 15 , VGE = 15V I C = 32A
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
t f - Nanoseconds
Eoff - MilliJoules
2.0
3.2 2.8
600 I = 32A
400
Eon - MilliJoules
1.5 I C = 16A
2.4 2.0 1.6 1.2
500
C
300
1.0
400
I
C
= 16A
200
0.5
0.8 0.4
300
100
0.0 25 35 45 55 65 75 85 95 105 115
0.0 125
200 10 20 30 40 50 60 70 80 90
0
TJ - Degrees Centigrade
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RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
800 700 600 260 800 700 600
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
240
tfi
VCE = 600V TJ = 125C
td(off) - - - -
RG = 15 , VGE = 15V
240 220
tfi
VCE = 600V
td(off) - - - -
RG = 15 , VGE = 15V
220 200 180
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f i - Nanoseconds
t f i - Nanoseconds
500 400 300 200 100 0 10 12
200 180 160
500 I 400 300 200 100 0 25 35 45 55 65 75 85 95 105 115 I C = 32A
C
= 16A 160 140 120 100 80 125
TJ = 25C
140 120 100
14
16
18
20
22
24
26
28
30
32
IC - Amperes
TJ - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGA20N120B3 IXGP20N120B3
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
200 180 160 90 140 120
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
26 80 70
tri
VCE = 600V
td(on) - - - -
tri
VCE = 600V
td(on) - - - -
TJ = 125C, VGE = 15V
RG = 15 , VGE = 15V
24
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r i - Nanoseconds
140 120 100 80 60 40 20 10 20 30 40 50 60 70 80 90 I
C
60 I = 32A 50 40 = 16A 30 20 10 0
t r i - Nanoseconds
100 80 60 40 20 0 10
22 20 18 16
C
TJ = 125C
TJ = 25C
14 12
12
14
16
18
20
22
24
26
28
30
32
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
160 140 120 28
tri
VCE = 600V
td(on) - - - -
26 24 22
RG = 15 , VGE = 15V
t d(on) - Nanoseconds
t r i - Nanoseconds
100 I C = 32A 80 60 40 20 0 25 35 45 55 65 75 85 95 105 115
20 18 16 14 12 125
I
C
= 16A
TJ - Degrees Centigrade
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_20N120B3(4L)03-17-09

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